ST72260G datasheet(123/171 Pages) STMICROELECTRONICS

123 / 171 page

ST72260G, ST72262G, ST72264G

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13.2 ABSOLUTE MAXIMUM RATINGS

Stresses above those listed as “absolute maxi-

mum ratings” may cause permanent damage to

the device. This is a stress rating only and func-

tional operation of the device under these condi-

tions is not implied. Exposure to maximum rating

conditions for extended periods may affect device

reliability.

13.2.1 Voltage Characteristics

13.2.2 Current Characteristics

13.2.3 Thermal Characteristics

Notes:

1. Directly connecting the RESET and I/O pins to VDD or VSS could damage the device if an unintentional internal reset

is generated or an unexpected change of the I/O configuration occurs (for example, due to a corrupted program counter).

To guarantee safe operation, this connection has to be done through a pull-up or pull-down resistor (typical: 4.7k

Ω for

RESET, 10k

Ω for I/Os). Unused I/O pins must be tied in the same way to V

DD or VSS according to their reset configuration.

2. When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise refer to

IINJ(PIN) specification. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS.

3. All power (VDD) and ground (VSS) lines must always be connected to the external supply.

4. Negative injection disturbs the analog performance of the device. See note in “10-BIT ADC CHARACTERISTICS” on

page 152. For best reliability, it is recommended to avoid negative injection of more than 1.6mA.

5. When several inputs are submitted to a current injection, the maximum

ΣI

INJ(PIN) is the absolute sum of the positive

and negative injected currents (instantaneous values). These results are based on characterisation with

ΣI

INJ(PIN) maxi-

mum current injection on four I/O port pins of the device.

6. True open drain I/O port pins do not accept positive injection.

Symbol

Ratings

Maximum value

Unit

VDD - VSS

Supply voltage

6.5

VIN

Input voltage on any pin 1) & 2)

VSS-0.3 to VDD+0.3

VESD(HBM)

Electrostatic discharge voltage (Human Body Model)

see Section 13.7.3 on page 137

VESD(MM)

Electrostatic discharge voltage (Machine Model)

Symbol

Ratings

Maximum value

Unit

IVDD

Total current into VDD power lines (source)

100

IVSS

Total current out of VSS ground lines (sink)

150

IIO

Output current sunk by any standard I/O and control pin

Output current sunk by any high sink I/O pin

Output current source by any I/Os and control pin

- 25

IINJ(PIN)

2) & 4)

Injected current on ICCSEL pin

± 5

Injected current on RESET pin

± 5

Injected current on OSC1 and OSC2 pins

± 5

Injected current on any other pin 5) & 6)

± 5

ΣI

INJ(PIN)

Total injected current (sum of all I/O and control pins) 5)

± 20

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

-65 to +150

°C

Maximum junction temperature (see Section Figure 111. "Low Profile Fine Pitch Ball Grid Array

Package" on page 155)

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