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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST52T430K2 датащи(PDF) 74 Page - STMicroelectronics |
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ST52T430K2 датащи(HTML) 74 Page - STMicroelectronics |
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74 / 88 page  ST52T430/E430 74/88 12.6 Memory Characteristics Subject to general operating conditions for VDD, fosc and TA, unless otherwise specified. Notes: 1. Minimum VDD supply voltage without losing data stored into RAM (in HALT mode or under RESET) or into hardware registers (only in HALT mode). Guaranteed by construction, not tested in production. 2. Data is provided only as a guideline. Table 12.9 RAM and Registers Symbol Parameter Conditions Min. Typ. Max Unit VRM Data retention mode1) HALT mode (or RESET) 1.6 V Table 12.10 EPROM Program Memory Symbol Parameter Conditions Min. Typ. Max Unit WERASE UV lamp Lamp wavelength 2537 A 15 Watt, sec/cm2) tERASE Erase time2) UV lamp is placed 1 inch from the device window without any interposed filters 15 20 min. tRET Data Retention TA =+55 °C 20 years |
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