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2SA1602A датащи(PDF) 2 Page - Isahaya Electronics Corporation

номер детали 2SA1602A
подробное описание детали  FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
PDF  5 Pages
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производитель  ISAHAYA [Isahaya Electronics Corporation]
домашняя страница  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

2SA1602A датащи(HTML) 2 Page - Isahaya Electronics Corporation

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< SMALL-SIGNAL TRANSISTOR >
2SA1235A
2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON
PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS（Ｔａ＝２５℃）
Ratings
Symbol
Parameter
2SA1235A
2SA1602A
2SA1993
Unit
Ｖ
ＣＢＯ
Collector to Base voltage
-60
-60
-50
V
Ｖ
ＥＢＯ
Emitter to Base voltage
-6
V
Ｖ
ＣＥＯ
Collector to Emitter
voltage
-50
V
Ｉ
Ｃ
Collector current
200
mA
Ｐ
Ｃ
Collector dissipation
200
200
450
mW
Ｔｊ
Junction temperature
+150
℃
Ｔｓｔｇ
Storage temperature
-55～+150
℃
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Limits
Parame
ter
Symbol
Test conditions
Min
Typ
Max
Unit
Ｖ
（ＢＲ）ＣＥＯ
C to E break down voltage
I
C=-100μA，RBE=∞
-50
V
2SA1993
V
CB=-50V，I E =0
-0.1
Ｉ
ＣＢＯ
Collector cut off current
Emitter cut off current
2SA1235A,2SA1602A
V
CB=-60V，I E =0
-0.1
μA
Ｉ
EＢＯ
DC forward current gain
V
EB=-6V，I C =0
-0.1
μA
ｈ
ＦＥ*
DC forward current gain
V
CE=-6V，I C =-1mA
150
500
－
2SA1993
50
－
ｈ
ＦＥ
C to E Saturation Vlotage
2SA1235A,2SA1602A
V
CE=-6V，I C =-0.1mA
90
－
Ｖ
ＣＥ（ｓａｔ）
Gain bandwidth product
I
C =-100mA，I B =-10mA
-0.3
V
ｆ
Ｔ
Collector output capacitance
V
CE=-6V，I E =10mA
200
MHz
Cob
C to E break down voltage
V
CB=-6V，I E =0,f=1MHz
4.0
pF
NF
Noise figure
V
CE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ
20
dB
*：
It shows hFE classification in below table.
E
F
2SA1235A
2SA1602A
ｈFE
2SA1993
150～300
250～500
ISAHAYA ELECTRONICS CORPORATION



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