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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF3704LPBF датащи(PDF) 2 Page - International Rectifier |
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IRF3704LPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF3704/S/LPbF 2 www.irf.com Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 216 mJ IAR Avalanche Current ––– 71 A Avalanche Characteristics S D G Diode Characteristics 77 308 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 42 ––– ––– S VDS = 10V, ID = 57A Qg Total Gate Charge ––– 19 ––– ID = 28.4A Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 ––– VGS = 4.5V Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 10V tr Rise Time ––– 98 ––– ID = 28.4A td(off) Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω tf Fall Time ––– 5.0 ––– VGS = 4.5V Ciss Input Capacitance ––– 1996 ––– VGS = 0V Coss Output Capacitance ––– 1085 ––– VDS = 10V Crss Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.88 1.3 V TJ = 25°C, IS = 35.5A, VGS = 0V ––– 0.82 ––– TJ = 125°C, IS = 35.5A, VGS = 0V trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 35.5A, VR=20V Qrr Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.3 9.0 VGS = 10V, ID = 15A ––– 9.8 13.5 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
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