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SG2525AP датащи(PDF) 4 Page - STMicroelectronics |
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SG2525AP датащи(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions SG2525A SG3525A Unit Min. Typ. Max. Min. Typ. Max. PWM COMPARATOR Minimum Duty-cycle 0 0 % • Maximum Duty-cycle 45 49 45 49 % • Input Threshold Zero Duty-cycle 0.7 0.9 0.7 0.9 V Maximum Duty-cycle 3.3 3.6 3.3 3.6 V * Input Bias Current 0.05 1 0.05 1 µA SHUTDOWN SECTION Soft Start Current VSD = 0 V, VSS = 0 V 2550 80 2550 80 µA Soft Start Low Level VSD = 2.5 V 0.4 0.7 0.4 0.7 V Shutdown Threshold To outputs, VSS = 5.1 V Tj =25 °C 0.6 0.8 1 0.6 0.8 1 V Shutdown Input Current VSD = 2.5 V 0.4 1 0.4 1 mA * Shutdown Delay VSD = 2.5 V Tj =25 °C 0.2 0.5 0.2 0.5 µs OUTPUT DRIVERS (each output) (VC =20 V) Output Low Level Isink = 20 mA 0.2 0.4 0.2 0.4 V Isink = 100 mA 1 2 1 2 V Output High Level Isource = 20 mA 1819 1819 V Isource = 100 mA 17 18 17 18 V Under-Voltage Lockout Vcomp and Vss = High 6 7 8 6 7 8 V IC Collector Leakage VC = 35 V 200 200 µA tr* Rise Time CL = 1 nF, Tj =25 °C 100 600 100 600 ns tf* Fall Time CL = 1 nF, Tj =25 °C 50 300 50 300 ns TOTAL STANDBY CURRENT Is Supply Current Vi = 35 V 14 20 14 20 mA * These parameters, although guaranteed over the recommended operating conditions, are not 100 % tested in production. • Tested at fosc = 40 KHz (RT = 3.6 K Ω,CT = 10nF, RD =0 Ω). Approximate oscillator frequency is defined by : 1 f= CT (0.7 RT +3 RD) . DC transconductance (gM) relates to DC open-loop voltage gain (Gv) according to the following equation : Gv =gM RL where RL is the resistance from pin 9 to ground. The minimum gM specification is used to calculate minimum Gv when the error amplifier output is loaded. SG2525A-SG3525A 4/12 |
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