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STTH6004W датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали STTH6004W
подробное описание детали  Ultrafast Silicon Diode
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STTH6004W датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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Ultrafast Silicon Diode
STTH6004W
www.iscsemi.com
1
FEATURES
· Ultrafast switching
· Low reverse current
· Low thermal resistance
APPLICATIONS
· UPS
· Server power equipment
· high-frequency rectifier diode
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Maximal Inverted Repetitive Peak Voltage
400
V
IFAV
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50% duty cycle
60
A
IFSM
Forward Peak Surge Current
(Rated Load 8.3 Half Mssine WaveAccording to JEDEC
Method)
600
A
TJ
Junction temperature
-40~175
℃
Tstg
storage temperature
-40~175
℃
Rθjc
Typical Thermal Resistance(per leg)
0.5
℃
/W
ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VF
Forward voltage
IF= 60A
--
1.45
V
IR
Reverse leakage current
VR = Rated VR
--
0.01
mA
trr
Reverse Recovery Time
IF=0.5A
IR=1.0A IREC=0.25A
--
55
nS


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