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MMBTA42 датащи(PDF) 3 Page - STMicroelectronics

номер детали MMBTA42
подробное описание детали  Small signal NPN transistor
PDF  8 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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MMBTA42 датащи(HTML) 3 Page - STMicroelectronics

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MMBTA42
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (2) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 200 V
100
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE =0)
IC = 100 µA
300
V
V(BR)CEO
(2)
Collector-emitter
breakdown voltage
(IB =0)
IC = 1 mA
300
V
V(BR)EBO
Emitter-base breakdown
voltage
(IC =0)
IC = 100 µA6
V
VCE(sat)
(2)
Collector-emitter
saturation voltage
IC = 20 mA
IB = 2 mA
0.5
V
VBE(sat)
(2)
Base-emitter saturation
voltage
IC = 20 mA
IB = 2 mA
0.9
V
hFE
(2)
DC current gain
IC = 1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 30 mA
VCE = 10 V
25
40
40
fT
Transition frequency
IC = 10 mA
VCE = 20 V
f = 100 MHz
50
MHz
CCBO
Collector-base
capacitance
(IE = 0)
VCB = 20 V
f = 1 MHz
3pF



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