isc N-Channel MOSFET Transistor

IXFN36N60

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

Typ

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage VGS= 0V; ID= 1mA

600

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 480V; VGS= 0V

--

--

400

uA

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0V

--

--

±

200

nA

VGS(th)

Gate Threshold Voltage

VDS =VGS; ID= 8mA

2.0

--

4.5

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 18A

--

--

0.18

Ω

VSD

Forward On-Voltage

IS= 36A; VGS= 0V

--

--

1.5

V

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

PACKAGE(UNIT:MM)

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notification. The information contained herein is presented only as a guide for the applications of our

products.