F3HNK90Z datasheet(5/15 Pages) STMICROELECTRONICS

номер детали	F3HNK90Z

подробное описание детали	N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH??Power MOSFET

PDF	15 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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STP3HNK90Z - STF3HNK90Z

Electrical characteristics

5/15

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

900

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

Tc = 125°C

µA

IGSS

Gate body leakage current

(VGS = 0)

VGS = ± 30V

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 1.5 A

3.5

4.2

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance VDS =15V, ID = 1.5A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

690

14.4

Cosseq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 720V

td(on)

td(off)

Turn-on delay time

Rise time

Off-voltage rise time

Fall time

VDD=450 V, ID= 1.5 A,

RG=4.7Ω, VGS=10V

(see Figure 18)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=720V, ID = 3A

VGS =10V

5.7

13.9

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