isc Silicon PNP Transistor

MJD5731

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

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products.

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SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage IC=-30mA; IB= 0

-350

--

V

ICEO

Collector Cutoff Current

VCE= -250V; IB=0

--

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

--

-0.5

mA

hFE-1

DC Current Gain

IC=-0.3A; VCE=-10V

30

175

--

hFE-2

IC=-1A; VCE=-10V

10

--

--

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB=-0.2A

--

-1.0

V

VBE(on)

Base-Emitter on Voltage

IC=-1A; VCE=-10V

--

-1.5

V