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ST7LCRE4U1 датащи(PDF) 20 Page - STMicroelectronics

номер детали ST7LCRE4U1
подробное описание детали  Full-speed USB MCU with smartcard interface
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производитель  STMICROELECTRONICS [STMicroelectronics]
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ST7LCRE4U1 датащи(HTML) 20 Page - STMicroelectronics

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4.7.2
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
4.7.3
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). The Human
Body Model is simulated. This test conforms to the JESD22-A114A standard.
Static and dynamic latch-up
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
DLU: Electrostatic discharges (one positive then one negative test) are applied to each
pin of 3 samples when the micro is running to assess the latch-up performance in
dynamic mode. Power supplies are set to the typical values, the oscillator is connected
Table 18.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
Frequency
Band
Max vs.
[fOSC/fCPU]
(1)
1.
Data based on characterization results, not tested in production.
Unit
4/8MHz 4/4MHz
SEMI
Peak level
VDD=5V, TA=+25 °C,
conforming to SAE J
1752/3
0.1 MHz to
30 MHz
19
18
dB
µV
30 MHz to
130 MHz
32
27
130 MHz to
1GHz
31
26
SAE EMI Level
4
3.5
-
Table 19.
Absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA=+25 °C
2000
V



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