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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BUW64A датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW64A датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Silicon NPN Power Transistor BUW64A/B/C www.iscsemi.com 1 FEATURES · High Switching Speed · Low Saturation Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage BUW64A 90 V BUW64B 110 BUW64C 130 VCBO Collector-Base Voltage BUW64A 140 V BUW64B 160 BUW64C 180 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Аналогичный номер детали - BUW64A |
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Аналогичное описание - BUW64A |
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