MJE172 datasheet(2/4 Pages) STMICROELECTRONICS

номер детали	MJE172

подробное описание детали	COMPLEMENTARY SILICON POWER TRANSISTORS

PDF	4 Pages

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THERMAL DATA

Rthj-amb

Rthj-case

Thermal Resistance Junction-ambient

Max

Thermal Resistance Junction-case

Max

83.4

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = rated VCBO

TCASE = 150

0.1

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

0.1

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 50 mA

IC = 1.5 A

IB = 0.15 A

IC = 3 A

IB = 0.6 A

0.3

0.9

1.7

VBE(sat)

∗ Base-Emitter on

Voltage

IC = 1.5 A

IB = 0.15 A

IC = 3 A

IB = 0.6 A

1.5

VBE

∗

Base-Emitter on

Voltage

IC = 0.5 A

VCE = 1 V

1.2

hFE

DC Current Gain

IC = 0.1 A

VCE = 1 V

IC = 0.5 A

VCE = 1 V

IC = 1.5 A

VCE = 1 V

250

Transistor Frequency

IC = 0.1 A

VCE = 10 V

f = 10 MHz

MHz

CCBO

Collector-base

Capacitance

VCB = 10 V

IE = 0

f = 0.1MHz

for MJE172

for MJE182

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%

For PNP type voltage and current values are negative.

MJE172 - MJE182

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