MJD127-1 datasheet(1/8 Pages) STMICROELECTRONICS

номер детали	MJD127-1

подробное описание детали	COMPLEMENTARY POWER DARLINGTON TRANSISTORS

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August 2002

MJD122-1 / MJD122T4

MJD127-1 / MJD127T4

COMPLEMENTARY POWER

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED SALESTYPES

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

s

THROUGH HOLE TO-251 (IPAK)

POWER PACKAGE IN TUBE (SUFFIX “-1”)

s

SURFACE MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4”)

s

ELECTRICALLY SIMILAR TO TIP122 AND

TIP127

APPLICATIONS:

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD122 and MJD127 form complementary

NPN - PNP pair. They are manufactured using

Epi taxial Bas e technology for cost-eff ective

performance.

ABSOLUTE MAXIMUM RATINGS

For PNP types voltage and current values are negative.

Ordering

Code

Marking

Package

Shipment

MJD122T4

MJD122-1

MJD127T4

MJD127-1

MJD122

MJD127

TO-252 (DPAK)

TO-251 (IPAK)

TO-252 (DPAK)

TO-251 (IPAK)

Tape & Reel

Tube

Tape & Reel

Tube

Symbol

Parameter

Value

Unit

NPN

MJD122

PNP

MJD127

VCBO

Collector-Base Voltage (IE =0)

100

V

VCEO

Collector-Emitter Voltage (IB =0)

100

V

VEBO

Emitter-Base Voltage (IC =0)

5V

IC

Collector Current

5

A

ICM

Collector Peak Current (tp < 5 ms)

8A

IB

Base Current

0.1

A

Ptot

Total Dissipation at Tc =25 °C

20

W

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

3

2

1

3

TO-252

DPAK

(Suffix ”T4”)

TO-251

IPAK

(Suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

R1 Typ. = 10 KΩ

R2 Typ. = 150 Ω

Аналогичный номер детали - MJD127-1

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJD127-1	284Kb / 8P	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
STMicroelectronics	MJD127-1	91Kb / 8P	COMPLEMENTARY POWER DARLINGTON TRANSISTORS Aug-2002

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Аналогичное описание - MJD127-1

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MJE700	256Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY 1995 REV 3
STMicroelectronics	MJD122-1	91Kb / 8P	COMPLEMENTARY POWER DARLINGTON TRANSISTORS Aug-2002
Fairchild Semiconductor	MJD122	137Kb / 8P	Complementary Darlington Power Transistors
ON Semiconductor	MJD112	101Kb / 8P	Complementary Darlington Power Transistors January, 2006 ??Rev. 7
STMicroelectronics	TIP122FP	646Kb / 11P	Complementary power Darlington transistors 02-Dec-2009
	TIP142	166Kb / 8P	Complementary power Darlington transistors 12-May-2010
	2STW100	121Kb / 7P	Complementary power Darlington transistors 08-Mar-2010
	STX112	343Kb / 9P	Complementary power Darlington transistors 07-Apr-2010
ON Semiconductor	NJVMJD112	153Kb / 10P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13
ON Semiconductor	MJD112	207Kb / 11P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13

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MJD127-1 датащи(PDF) 1 Page - STMicroelectronics

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