MJ3001 datasheet(1/4 Pages) STMICROELECTRONICS

номер детали	MJ3001

подробное описание детали	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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MJ2501

MJ3001

COMPLEMENTARY SILICON POWER DARLINGTON

TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION

The MJ2501 is a silicon epitaxial-base PNP

power

transistors

in

monolithic

Darlington

configuration and are mounted in Jedec TO-3

metal case. They are intented for use in power

linear and switching applications.

The complementary NPN type is the MJ3001.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

PNP

MJ2501

NPN

MJ3001

VCBO

Collector-base Voltage (IE = 0)

80

V

VCEO

Collector-emitter Voltage (IB = 0)

80

V

VEBO

Emitter-base Voltage (IC = 0)

5

V

IC

Collector Current

10

A

IB

Base Current

0.2

A

Ptot

Total Dissipation at Tc

≤ 25 oC

150

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

For PNP types voltage and current values are negative.

1

2

TO-3

R1 Typ. = 10 K

Ω

R2 Typ. = 150

Ω

1/4

Аналогичный номер детали - MJ3001

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJ3001	132Kb / 4P	10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
ON Semiconductor	MJ3001	98Kb / 4P	DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON 1998
Central Semiconductor C...	MJ3001	54Kb / 1P	Power Transistors
List of Unclassifed Man...	MJ3001	485Kb / 4P	10 Ampere Darlington Power Transistors Complementary Silicon
STMicroelectronics	MJ3001	51Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-2003

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Аналогичное описание - MJ3001

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STMicroelectronics	BDW83C	67Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jun-1997
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ON Semiconductor	BDW42G	89Kb / 7P	Darlington Complementary Silicon Power Transistors August, 2016 ??Rev. 17
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