(2)

Case top temperature can be higher than temperature of active circuit because of inductor power dissipation. This results in a

negative Junction-to-top characterization parameter.

(3)

Not applicable to an EVM

6.5 Electrical Characteristics

Over operating junction temperature (TJ = -40 °C to +125 °C) and VIN = 2.75 V to 6 V. Typical values at VIN = 5 V and TJ = 25

°C. (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY

IQ

Operating Quiescent Current

EN = high, IOUT = 0mA, Device not

switching

15

21

µA

ISD

Shutdown Current

EN = 0V

0.11

18

µA

VUVLO

Undervoltage Lockout Threshold

Rising Input Voltage

2.5

2.6

2.75

V

Falling Input Voltage

2.25

2.5

2.6

V

TSD

Thermal Shutdown Temperature

Rising Junction Temperature

170

°C

Thermal Shutdown Hysteresis

15

CONTROL (EN, SS/TR, PG, MODE/SYNC)

VIH

High Level Input Voltage for MODE/

SYNC Pin

1.1

V

VIL

Low Level Input Voltage for MODE/

SYNC Pin

0.3

V

fSYNC

Frequency Range on MODE/SYNC

Pin for Synchronization

1.8

4

MHz

Duty Cycle of Synchronization Signal

at MODE/SYNC Pin

40%

50%

60%

VIH

Input Threshold Voltage for EN pin

Rising EN

1.06

1.1

1.15

V

VIL

Input Threshold Voltage for EN pin

Falling EN

0.96

1.0

1.05

V

ILKG

Input Leakage Current for EN, MODE/

SYNC Pins

EN, MODE/SYNC = VIN or GND

150

nA

VTH_PG

UVP Power Good Threshold

Rising (%VFB)

92%

95%

98%

UVP Power Good Threshold

Falling (%VFB)

87%

90%

93%

OVP Power Good Threshold

Rising (%VFB)

107%

110%

113%

OVP Power Good Threshold

Falling (%VFB)

104%

107%

111%

Power Good De-glitch Time

for a high level to low level transition

on power good

40

µs

VOL_PG

Power Good Output Low Voltage

IPG = 2mA

0.07

0.3

V

ILKG_PG

Input Leakage Current for PG Pin

VPG = 5V

100

nA

ISS/TR

SS/TR Pin Source Current

2.1

2.5

2.8

µA

tdelay

Start-up Delay Time

Time from EN=high to start switching;

VIN applied already

135

200

450

µs

tramp

Ramp time; SS/TR Pin Open

Time from first switching pulse until

95% of nominal output voltage

100

150

200

µs

Tracking Gain

VFB/VSS/TR

1

Tracking Offset

FB pin with VSS/TR = 0V

17

mV

POWER SWITCH

RDS(ON)

High-Side MOSFET ON-Resistance

VIN ≥ 5V

37

60

mΩ

RDS(ON)

Low-Side MOSFET ON-Resistance

VIN ≥ 5V

15

35

mΩ

RDP

Dropout resistance

100% mode. Maximum value at VIN =

3.3V, TJ = 85°C

50

90

mΩ

ILIMH

High-Side MOSFET Current Limit (1)

TPSM82810; VIN = 3V to 6V

4.8

5.6

6.55

A

ILIMH

High-Side MOSFET Current Limit(1)

TPSM82813; VIN = 3V to 6V

3.9

4.5

5.25

A

ILIMNEG

Negative Current Limit (1)

MODE/SYNC = HIGH

–1.8

A

fS

PWM Switching Frequency Range

1.8

2.25

4

MHz

TPSM82810, TPSM82813

SLUSDN6D – SEPTEMBER 2019 – REVISED JUNE 2026

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