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STTH512D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали STTH512D
подробное описание детали  Fast Recovery Diode
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STTH512D датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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STTH512D
Fast Recovery Diode
www.iscsemi.com
1
DESCRIPTION
· Guarding For Over Voltage Protection
· Metal Of Silicon Rectifier,Majority Carrier Conduction
· Low Forward Voltage,High Efficiency
APPLICATIONS
·
Switching Power Supply
·
Motor control
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Recurrent Peak Reverse Voltage
1200
V
IFAV
Average Forward Rectified Current
TC = 145 °C
5
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
55
A
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃
/W
ELECTRICAL CHARACTERISTICS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VF
Diode Forward Voltage
IF= 5A;TJ= 25℃
--
2.2
V
IF= 5A;TJ= 125℃
--
2.0
IR
Reverse Current
VR=VRRM;TJ= 25℃
--
5
uA
VR=VRRM;TJ=125℃
--
30
trr
Reverse Recovery Time
IF=1A,dIF/dt = -50 A/µs,VR = 30 V
--
95
ns


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