CMV4000 datasheet(21/92 Pages) AMSOSRAM

21 / 92 page

CMV4000

Functional description

Datasheet

• PUBLIC • Document Feedback

DS000728

• v8-01 • 2025-Jul-10

21 / 92

Functional description

7.1

Sensor architecture

Figure 1 shows the image sensor architecture. The internal sequencer generates the

necessary signals for image acquisition. The image is stored in the pixel (global shutter) and is

then read out sequentially, row-by-row. On the pixel output, an analog gain is possible. The

pixel values then passes to a column ADC cell, in which ADC conversion is performed. The

digital signals are then read out over multiple LVDS channels. Each LVDS channel reads out

128 adjacent columns of the array. In the Y-direction, rows of interest are selected through a

row-decoder which allows a flexible windowing. Control registers are foreseen for the

programming of the sensor. These register parameters are uploaded via a four-wire SPI

interface. A temperature sensor which can be read out over the SPI interface is also included.

7.1.1

Pixel array

The pixel array consists of 2048 x 2048 square global shutter pixels with a pitch of 5.5 µm

(5.5 μm x 5.5 μm). This results in an optical area of close to 1 optical inch (16 mm). This

means that off-the shelve C-mount lenses can be used.

The pixels are designed to achieve maximum sensitivity with low noise and low PLS

specifications. Micro lenses are placed on top of the pixels for improved fill factor and quantum

efficiency (>50%).

7.1.2

Analog front end

The analog front end consists of 2 major parts, a column amplifier block and a column ADC

block.

The column amplifier prepares the pixel signal for the column ADC and applies analog gain if

desired (programmable using the SPI interface). The column ADC converts the analog pixel

value to a 10-bit or 12-bit value. A digital offset can also be applied to the output of the column

ADC’s. All gain and offset settings can be programmed using the SPI interface.

CMV4000 датащи(PDF) 21 Page - ams-OSRAM AG