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RA4M2 датащи(PDF) 38 Page - Renesas Technology Corp |
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RA4M2 датащи(HTML) 38 Page - Renesas Technology Corp |
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38 / 93 page ![]() Table 2.19 Reset timing (2 of 2) Parameter Symbol Min Typ Max Unit Test conditions Wait time after internal reset cancellation (IWDT reset, WDT reset, software reset, SRAM parity error reset, SRAM ECC error reset, bus master MPU error reset, TrustZone error reset) tRESW2 — 324 397.7 µs — VCC RES Internal reset signal (low is valid) tRESWP tRESWT VCCmin Figure 2.12 RES pin input timing under the condition that VCC exceeds VPOR voltage threshold RES Internal reset signal (low is valid) tRESWD, tRESWS, tRESW tRESWT Figure 2.13 Reset input timing 2.3.4 Wakeup Timing Table 2.20 Timing of recovery from low power modes (1 of 2) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode*1 Crystal resonator connected to main clock oscillator System clock source is main clock oscillator*2 tSBYMC*13 — 2.1 2.4 ms Figure 2.14 The division ratio of all oscillators is 1. System clock source is PLL with main clock oscillator*3 tSBYPC*13 — 2.2 2.6 ms External clock input to main clock oscillator System clock source is main clock oscillator*4 tSBYEX*13 — 45 125 μs System clock source is PLL with main clock oscillator*5 tSBYPE*13 — 170 255 μs System clock source is sub-clock oscillator*6 *11 tSBYSC*13 — 0.7 0.8 ms System clock source is LOCO*7 *11 tSBYLO*13 — 0.7 0.9 ms System clock source is HOCO clock oscillator*8 tSBYHO*13 — 55 130 µs System clock source is PLL with HOCO*9 tSBYPH*13 — 175 265 µs System clock source is MOCO clock oscillator*10 tSBYMO*13 — 35 65 µs RA4M2 Datasheet 2. Electrical Characteristics R01DS0367EJ0140 Rev.1.40 May 9, 2025 Page 38 of 93 |
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