UPC813

R03DS0149EJ0200 Rev.2.00

Page 3 of 7

Feb.25.25

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V ± = ±15 V)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Test Condition

Input Offset Voltage

VIO

±1

±2.5

mV

RS ≤ 50 Ω

Input Offset Current Note7

IIO

±25

±100

pA

Input Bias Current Note7

IB

50

200

pA

Large Signal Voltage Gain

AV

25000

200000

RL ≥ 2 kΩ, VO = ±10 V

Circuit Current

ICC

2.5

3.4

mA

IO = 0 A

Common Mode Rejection Ratio

CMR

70

100

dB

Supply Voltage Rejection Ratio

SVR

70

100

dB

Output Voltage Swing

Vom

±12

+14.0

-13.3

V

RL ≥ 10 kΩ

Output Voltage Swing

Vom

±10

+13.5

-12.8

V

RL ≥ 2 kΩ

Common Model Input Voltage

Range

VICM

±11

+14

-12

V

Slew Rate

SR

25

V/μs

AV = 1

Unity Gain Frequency

funity

6

MHz

Input Equivalent Noise Voltage

Density

en

19

nV/ Hz

RS = 100 Ω, f = 1 kHz

Input Offset Voltage

VIO

±5

mV

RS ≤ 50 Ω, TA = -20 ~ +70 °C

Average VIO Temperature Drift

Δ

VIO/ΔT

±7

μV/°C

TA = -20 ~ +70 °C

Input Offset Current Note7

IIO

±2

nA

TA = -20 ~ +70 °C

Input Bias Current Note7

IB

7

nA

TA = -20 ~ +70 °C

【

Note】 7. The direction of the input bias current is the same direction that flows into the IC because the first stage is

composed of Pch J-FET. When TJ = 25°C or higher, it increases exponentially with increase in temperature

(please see IB - TA characteristics). During measurement, please kindly take care of TJ ≒ TA.

Caution

Since UPC813 has high input impedance characteristics, please be careful of insulation between the terminals

on the board.