ISCF80131

eq MSC090SMA070B

SiC N-Channel MOSFET

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= 0.1mA

700

--

--

V

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 0.75mA

1.9

--

5.0

V

RDS(ON)1

Drain-Source On-stage Resistance

VGS= 20V, ID=15A

--

90

112

mΩ

RDS(ON)2

Drain-Source On-stage Resistance

VGS= 18V, ID=15A

--

102

--

mΩ

IGSS

Gate Source Leakage Current

VGS= -10/+20V, VDS= 0V

--

--

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS = 700V, VGS = 0V

--

--

25

μA

VSD

Diode Forward Voltage

ISD= 15A, VGS= 0V

--

3.7

--

V

ISD= 15A, VGS= 0V

--

--

5

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