ISB3108

eq BFR93A

isc NPN Silicon RF Transistor

www.iscsemi.com

2023-10-10

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=1mA; IB= 0A

12

--

--

V

ICBO

Collector Cutoff Current

VCB = 10V; IE= 0A

--

--

100

nA

hFE

DC Current Gain

IC= 30mA; VCE= 5V

40

--

--

--

fT

Transition Frequency

VCE= 5V, IC= 30mA,f=500MHZ

--

6.0

--

GHz

Cre

Feedback Capacitance

VCB= 5V, IE= 0mA, f= 1MHz

--

1.6

--

pF

|S21e|2

Insertion Power Gain

VCE= 10V, IC= 20mA, f= 1GHz

--

11.5

--

dB

NF

Minimum Noise Figure

VCE= 10V, IC= 7mA, f= 1GHz

--

1.3

--

dB

Package Dimensions

Product Disclaimer

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you