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IRF830 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали IRF830
подробное описание детали  isc N-Channel MOSFET Transistor
PDF  3 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF830 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
IRF830
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 4.5A@ TC=25℃
· Drain Source Voltage -VDSS= 500V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 1.5Ω(Max)@VGS= 10V
APPLICATIONS
· Switching Regulators
· Converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
4.5
A
IDM
Drain Current-Single Pulse
18
A
PD
Total Dissipation
74
W
TJ
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.67
℃
/W


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