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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF4905 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF4905 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc P-Channel MOSFET Transistor IRF4905 www.iscsemi.com 1 FEATURES · Drain Current -ID= -74A@ TC=25℃ · Drain Source Voltage -VDSS= -55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.02Ω(Max)@VGS= -10V DESCRIPTION · Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous -74 A IDM Drain Current-Single Pulsed -260 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.75 ℃ /W |
Аналогичный номер детали - IRF4905 |
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Аналогичное описание - IRF4905 |
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