FZT853 datasheet(1/2 Pages) ISC

номер детали	FZT853

подробное описание детали	NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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NPN Power Transistor

FZT853

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 100V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):150mV(Max) @IC=2A

APPLICATIONS

· RoHS Compliant

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

100

V

VCBO

Collector-Base Voltage

200

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

6

A

PD

Total Power Dissipation

3

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - FZT853

производитель	номер детали	датащи	подробное описание детали
Zetex Semiconductors	FZT853	53Kb / 3P	NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
Guangdong Kexin Industr...	FZT853	40Kb / 2P	NPN Silicon Planar High Current Transistor
Diodes Incorporated	FZT853	64Kb / 3P	SOT223 NPN SILICON PLANAR HIGH CURRENT OCTOBER 1995
	FZT853	254Kb / 12P	PWM high-efficiency LED driver control IC. JUNE 2011
	FZT853	406Kb / 7P	100V NPN MEDIUM POWER TRANSISTOR Rev 6

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Аналогичное описание - FZT853

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BD131	43Kb / 8P	NPN power transistor 1999 Apr 12
TRANSYS Electronics Lim...	2N3055HV	201Kb / 3P	NPN POWER TRANSISTOR
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Unisonic Technologies	2SD1782	125Kb / 3P	POWER NPN TRANSISTOR
WeEn Semiconductors	BUJ302AX	794Kb / 12P	NPN power transistor
	PHE13003C	270Kb / 11P	NPN power transistor
	TB100	254Kb / 10P	NPN power transistor

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FZT853 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

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Аналогичный номер детали - FZT853

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