2SB596 datasheet(1/2 Pages) ISC

номер детали	2SB596

подробное описание детали	Silicon PNP Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SB596

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -80V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): -1.7V(Max) @IC=-3A

APPLICATIONS

· For power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current-Continuous

-4

A

IB

Base Current-Continuous

-0.4

A

PC

Total Power Dissipation

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBO

L

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.17

℃

/W

Аналогичный номер детали - 2SB596

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	2SB596	119Kb / 3P	POWER TRANSISTORS(4.0A,80V,30W)
Wing Shing Computer Com...	2SB596	69Kb / 1P	PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
Savantic, Inc.	2SB596	139Kb / 4P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SB596	241Kb / 4P	Silicon PNP Power Transistors
Savantic, Inc.	2SB596	141Kb / 4P	Silicon PNP Power Transistors

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Аналогичное описание - 2SB596

производитель	номер детали	датащи	подробное описание детали
NEC	2SA1142	64Kb / 1P	PNP SILICON POWER TRANSISTOR
Microsemi Corporation	2N5151	60Kb / 2P	PNP POWER SILICON TRANSISTOR
Inchange Semiconductor ...	2SA1303	106Kb / 2P	Silicon PNP Power Transistor
Inchange Semiconductor ...	2SA1741	164Kb / 3P	Silicon PNP Power Transistor
New Jersey Semi-Conduct...	2SA1880	76Kb / 2P	Silicon PNP Power Transistor
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	2SA1941	74Kb / 2P	Silicon PNP Power Transistor
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