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STM32WB09XE датащи(PDF) 49 Page - STMicroelectronics |
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STM32WB09XE датащи(HTML) 49 Page - STMicroelectronics |
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49 / 73 page ![]() 2. XOTUNE programed at center code = 32 3. XOTUNE programed at maximum code = 63 6.3.10 Low speed crystal requirements Low speed clock can be supplied with an external 32.768 kHz crystal oscillator. Requirements for the external 32.768 kHz crystal are reported in the table below. Table 29. LSE crystal requirements Symbol Parameter Conditions Min. Typ. Max. Unit fNOM Nominal frequency - - 32.768 - kHz ESR Equivalent series resistance - - - 90 kΩ PD Drive level - - - 0.1 µW Gmcritmax Maximum critical crystal gm LSEDRIV[1:0] = 00 Low drive capability - - 0.50 µA/V LSEDRIV[1:0] = 01 Medium low drive capability - - 0.75 LSEDRIV[1:0] = 10 Medium high drive capability - - 1.70 LSEDRIV[1:0] = 11 High drive capability - - 2.70 6.3.11 High speed ring oscillator characteristics Table 30. HSI oscillator characteristics Symbol Parameter Conditions Min. Typ. Max. Unit fNOM Nominal frequency - - 64 - MHz 6.3.12 Low speed ring oscillator characteristics Table 31. LSI oscillator characteristics Symbol Parameter Conditions Min. Typ. Max. Unit fNOM Nominal frequency VDD =3 .3 V Ambient temperature Typical corner - 33 - kHz ΔFRO_ΔT/FRO Frequency spread vs. temperature Standard deviation - 140 - ppm/ºC 6.3.13 PLL characteristics Characteristics measured over recommended operating conditions unless otherwise specified. Table 32. PLL characteristics Symbol Parameter Conditions Min. Typ. Max. Unit PNSYNTH RF carrier phase noise At ±1 MHz offset from carrier (measured at 2.4 GHz) - -110 - dBc/Hz STM32WB09xE Electrical characteristics DS14210 - Rev 6 page 49/73 |
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