SCM3000C Series

SCM3000C-DSE Rev.1.2

SANKEN ELECTRIC CO., LTD.

7

Aug. 21, 2017

http://www.sanken-ele.co.jp/en

© SANKEN ELECTRIC CO., LTD. 2016

3.3.

Thermal Resistance Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

Junction-to-Case Thermal

Resistance

( 1)

R(j-c)Q

( 2)

1 element operation

(IGBT)

—

—

3.6

°C/W

R(j-c)F

( 3)

1 element operation

(freewheeling diode)

—

—

4.5

°C/W

(1) Refers to a case temperature at the measurement point described in Figure 3-1, below.

(2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient

thermal characteristics, see Section 15.1.

(3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.

Measurement point

1

14

22

15

Figure 3-1.

Case Temperature Measurement Point

3.4.

Transistor Characteristics

Figure 3-2 provides the definitions of switching characteristics described in this and the following sections.

HINx/

LINx

IC

10%

0

VCE

td(on)

0

0

90%

tr

ton

trr

td(off) tf

toff

Figure 3-2.

Switching Characteristics Definitions