APM32F003F6P7-R datasheet(27/56 Pages) GEEHY

номер детали	APM32F003F6P7-R

подробное описание детали	Arm® Cortex®-M0 based 32-bit MCU

PDF	56 Pages

Scroll/Zoom	100%

производитель	GEEHY [Geehy Semiconductor Co., Ltd.]

домашняя страница	https://global.geehy.com/

Logo

27 / 56 page

www.geehy.com

Page 26

Flash memory characteristics

Table 21 Flash storage characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Unit

tprog

16-bit programming time

TA=-40~105°C

VDD=2.95~5.0V

22.4

22.97

23.8

μs

tERASE

Page (1kbyte) erase time

TA=-40~105°C

VDD=2.95~5.0V

1.48

1.55

1.64

tME

Whole erase time

TA=25°C

VDD=3.3V

6.32

6.57

6.96

Vprog

Programming voltage

TA=-40~105°C

5.5

tRET

Data saving time

TA=125°C

years

NRW

Erase cycle

TA=25°C

100K

cycles

Clock

5.5.1.

External clock source characteristics

High Speed External Clock Generated by Crystal Resonator (HXT osc)

For detailed parameters (frequency, package, precision, etc.) of crystal

resonator, please consult the corresponding manufacturer.

Table 22 Characteristics of HXT 1-24MHz oscillator

Symbol

Parameter

Condition

Min

Typ

Max

Unit

fHXT

Oscillator frequency

MHz

Feedback resistance

300

kΩ

Recommended load

capacitance

IDD(HXT)

HXT oscillator power

consumption

C=20pF,

fOSC=16MHz

6 (startup) 1.6

(stabilized)

C=10pF,

fOSC=16MHz

6 (startup) 1.2

(stabilized)

tSU(HXT)

Startup time

VDD is stable

5.5.2.

Internal clock source characteristics

Test of High Speed Internal (HIRC) Oscillator

Table 23 HIRC oscillator characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Unit

fHIRC

Frequency

MHz

APM32F003F6P7-R датащи(PDF) 27 Page - Geehy Semiconductor Co., Ltd.

APM32F003F6P7-R датащи(HTML) 27 Page - Geehy Semiconductor Co., Ltd.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56

датащи скачать

ссылки URL