Symbol

Alt

Parameter

Test Condition

M29F200T / M29F200B

Unit

-90

-120

Standard

Interface

Standard

Interface

Min

Max

Min

Max

Address Valid to Next Address Valid

90

120

ns

Address Valid to Output Valid

90

120

ns

(1)

Chip Enable Low to Output Transition

00

ns

(2)

Chip Enable Low to Output Valid

90

120

ns

(1)

Output Enable Low to Output

Transition

00

ns

(2)

Output Enable Low to Output Valid

35

50

ns

Chip Enable High to Output

Transition

00

ns

(1)

Chip Enable High to Output Hi-Z

20

30

ns

Output Enable High to Output

Transition

00

ns

(1)

Output Enable High to Output Hi-Z

20

30

ns

Address Transition to Output

Transition

00

ns

(1,3)

RP Low to Read Mode

10

10

µs

RP High to Chip Enable Low

50

50

ns

RP Pulse Width

500

500

ns

Chip Enable to BYTE Switching Low

or High

55

ns

20

30

ns

40

40

ns

Notes: 1. Sampled only, not 100% tested.

3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.

Table 14B. Read AC Characteristics

°C, –40 to 85°C or –40 to 125°C)

a block not being erased returns valid data. During

suspension the memory will respond only to the

Erase Resume ER and the Program PG instruc-

tions. A Program operation can be initiated during

erase suspend in one of the blocks not being

erased. It will result in both DQ2 and DQ6 toggling

when the data is beingprogrammed. ARead/Reset

command will definitively abort erasure and result

in invalid data in the blocks being erased.

Erase Resume (ER) Instruction. If an Erase Sus-

pend instruction was previously executed, the

erase operation may be resumed by giving the

command 30h, at any address, and without any

Coded cycles.

15/33

M29F200T, M29F200B