MBR2045CT datasheet(2/6 Pages) ONSEMI

2 / 6 page

MBR2045CT

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

Average Rectified Forward Current

Per Device

Per Diode (TC = 165°C)

IF(AV)

Peak Repetitive Forward Current

per Diode Leg (Square Wave, 20 kHz, TC = 163°C)

IFRM

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

150

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

See Figure 11

IRRM

1.0

Storage Temperature Range

Tstg

−65 to +175

°C

Operating Junction Temperature (Note 1)

−65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Maximum Thermal Resistance, Junction−to−Case (Min. Pad)

RqJC

2.0

°C/W

Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad)

RqJA

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Instantaneous Forward Voltage (Note 2)

(iF = 10 Amps, TJ = 125°C)

(iF = 20 Amps, TJ = 125°C)

(iF = 20 Amps, TJ = 25°C)

−

0.50

0.67

0.71

0.57

0.72

0.84

Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

−

10.4

0.02

0.1

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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