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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFU3704ZPBF датащи(PDF) 2 Page - International Rectifier |
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IRFU3704ZPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRFR/U3704ZPbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 6.7 8.4 m Ω ––– 9.2 11.4 VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 41 ––– ––– S Qg Total Gate Charge ––– 9.3 14 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.1 ––– nC Qgd Gate-to-Drain Charge ––– 2.7 ––– Qgodr Gate Charge Overdrive ––– 2.5 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.8 ––– Qoss Output Charge ––– 5.6 ––– nC td(on) Turn-On Delay Time ––– 41 ––– tr Rise Time ––– 8.9 ––– td(off) Turn-Off Delay Time ––– 4.9 ––– ns tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 1190 ––– Coss Output Capacitance ––– 380 ––– pF Crss Reverse Transfer Capacitance ––– 170 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 60 f (Body Diode) A ISM Pulsed Source Current ––– ––– 240 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 1319ns Qrr Reverse Recovery Charge ––– 4.2 6.3 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 20V VGS = -20V Conditions 4.8 Max. 41 12 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A e VDS = VGS, ID = 250µA VDS =16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C Clamped Inductive Load VDS = 10V, ID = 12A VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V e ID = 12A VDS = 10V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs e TJ = 25°C, IS = 12A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VGS = 4.5V, ID = 12A e ––– VGS = 4.5V Typ. ––– ––– ID = 12A VGS = 0V VDS = 10V |
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