DMTH4014LDVWQ

Document number: DS42792 Rev. 2 - 2

2 of 7

www.diodes.com

January 2021

© Diodes Incorporated

DMTH4014LDVWQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current, VGS = 10V (Note 6)

TC = +25°C

ID

27.5

A

TC = +100°C

19.5

Continuous Drain Current, VGS = 10V (Note 6)

Steady

State

TA = +25°C

ID

10.2

A

TA = +100°C

7.2

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

110

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

3.7

A

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

ISM

110

A

Avalanche Current, L = 0.1mH

IAS

19.8

A

Avalanche Energy, L = 0.1mH

EAS

19.6

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.16

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

129

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

57.5

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

7.8

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

12.8

15

m

Ω

VGS = 10V, ID = 20A

—

19.4

25

VGS = 4.5V, ID = 15A

Diode Forward Voltage

VSD

—

1.0

1.2

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

750

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

225

—

pF

Reverse Transfer Capacitance

Crss

—

21

—

pF

Gate Resistance

Rg

—

1.1

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

5.7

—

nC

VDS = 20V, ID = 20A

Total Gate Charge (VGS = 10V)

Qg

—

11.2

—

nC

Gate-Source Charge

Qgs

—

2.0

—

nC

Gate-Drain Charge

Qgd

—

2.2

—

nC

Turn-On Delay Time

tD(ON)

—

3.5

—

ns

VGS = 10V, VDD = 20V,

Rg = 1.6Ω, ID = 20A

Turn-On Rise Time

tR

—

4.6

—

ns

Turn-Off Delay Time

tD(OFF)

—

12.4

—

ns

Turn-Off Fall Time

tF

—

4.9

—

ns

Body Diode Reverse Recovery Time

tRR

—



11.3

—



ns

IF = 15A, di/dt = 400A/µs

Body Diode Reverse Recovery Charge

QRR

—



9.5

—



nC

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.