DMTH4002SCTBQ

Document number: DS40950 Rev. 3 - 2

2 of 7

www.diodes.com

April 2020

© Diodes Incorporated

DMTH4002SCTBQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6)

TC = +25°C

ID

192

A

TC = +100°C

136

Maximum Continuous Body Diode Forward Current (Note 6)

TC = +25°C

IS

100

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

760

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

760

A

Avalanche Current, L = 3mH

IAS

19.2

A

Avalanche Energy, L = 3mH

EAS

551.8

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

6

W

Thermal Resistance, Junction to Ambient (Note 5)

RϴJA

25

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

PD

166.7

W

Thermal Resistance, Junction to Case (Note 6)

RϴJC

0.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2

—

4

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

2.22

3

m

Ω

VGS = 10V, ID = 90A

Diode Forward Voltage

VSD

—

0.8

1.2

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

7180

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

1698

—

Reverse Transfer Capacitance

Crss

—

17

—

Gate Resistance

RG

—

1.04

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

77.5

—

nC



VDD = 20V, ID = 90A,

VGS = 10V

Gate-Source Charge

Qgs

—

23.6

—

Gate-Drain Charge

Qgd

—

13.6

—

Turn-On Delay Time

tD(ON)

—

16.8

—

ns

VDD = 20V, VGS = 10V,

ID = 90A, RG = 3.5Ω

Turn-On Rise Time

tR

—

8.0

—

Turn-Off Delay Time

tD(OFF)

—

35.8

—

Turn-Off Fall Time

tF

—

11.6

—

Reverse Recovery Time

tRR

—

46.36

—

ns

IF = 15A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

56.11

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.