AP22804 / AP22814

Document number: DS39137 Rev. 1 - 2

4 of 19

www.diodes.com

November 2016

© Diodes Incorporated

AP22804 / AP22814

Electrical Characteristics (VIN = 5V @ TA = +25°C, CIN = 1µF, CL = 100nF, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VUVLO

Input UVLO

VIN rising

1.6

2.0

2.4

V

ΔVUVLO Input UVLO Hysteresis

VIN decreasing

—

180

—

mV

ISHDN

Input Shutdown Current

Disabled, OUT = open

—

0.1

1

µA

IQ

Input Quiescent Current

Enabled, OUT = open

—

80

—

µA

ILEAK

Input Leakage Current

Disabled, OUT grounded

—

0.1

1

µA

IREV

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5V, IREV at VIN

—

0.01

1

µA

RDS(ON) Switch On-Resistance

AP228X4

VIN = 5.0V, IOUT = 1A

MSOP-8

—

50

65

m

Ω

VIN = 5.0V, IOUT = 1A

SOT25

—

50

65

VIN = 5.0V, IOUT = 1A

U-DFN2020-6

—

50

65

ILIMIT

Over Load Current Limit

AP22804, VIN = 5V, VOUT = 4.5V

2.7

3.0

3.3

A

AP22814, VIN = 5V, VOUT = 4.5V

3.1

3.45

3.8

A

ISHORT

Short-Circuit Current Limit

AP22804, Enabled, Output short to ground

—

0.45

—

A

AP22814, Enabled, Output short to ground

—

0.65

—

A

VIL

EN Input Logic Low Voltage

VIN = 2.7V to 5.5V

—

—

0.65

V

VIH

EN Input Logic High Voltage

VIN = 2.7V to 5.5V

1.5

—

—

V

ILEAK-EN EN Input Leakage

VIN = 5V, VEN = 0V and 5.5V

—

0.01

1

µA

ILEAK-O Output Leakage Current

Disabled, VOUT = 0V

—

0.5

1

µA

tD(ON)

Output Turn-On Delay Time

CL = 4.7µF, RLOAD = 10Ω @ VIN = 3.3V

Figure 1

—

1.7

—

ms

tR

Output Turn-On Rise Time

CL = 4.7µF, RLOAD = 10Ω @ VIN = 3.3V

Figure 1

1.0

2.1

3.5

ms

tD(OFF)

Output Turn-Off Delay Time

CL = 4.7µF, RLOAD = 10Ω @ VIN = 3.3V

Figure 1

—

20

—

µs

tF

Output Turn-Off Fall Time

CL = 4.7µF, RLOAD = 100Ω @ VIN = 3.3V Figure 1

—

0.65

—

ms

RFLG

FLG Output FET On-Resistance

IFLG = 10mA

—

40

60

Ω

IFOH

FLG Off Current

VFLG = 5V

—

0.01

1

µA

tBLANK

FLG Blanking Time

Assertion or deassertion due to overcurrent and over-

temperature condition

2

6

13

ms

tDIS

Discharge Time

CL = 1µF, VIN = 5V, disabled to VOUT < 0.5V

—

0.4

—

ms

RDIS

Discharge Resistance

VIN = 5V, disabled, IOUT = 1mA

—

90

130

Ω

TSHDN

Thermal Shutdown Threshold

Enabled

—

+140

—

C

THYS

Thermal Shutdown Hysteresis

—

—

+35

—

C

VRVP

Reverse-Voltage Comparator Trip

Point

VOUT - VIN

25

50

75

mV

IROCP

Reverse Current Limit

VOUT - VIN = 100mV

—

400

—

mA

tTRIG

Time from Reverse-Voltage

Condition to MOSFET Turn Off

VIN

2

6

13

ms