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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M48T212Y датащи(PDF) 22 Page - STMicroelectronics |
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M48T212Y датащи(HTML) 22 Page - STMicroelectronics |
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22 / 32 page  M48T212Y, M48T212V 22/32 VCC Noise And Negative Going Transients ICC transients, including those produced by output switching, can produce voltage fluctuations, re- sulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store en- ergy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic by- pass capacitor value of 0.1µF (as shown in Figure 13) is recommended in order to provide the need- ed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate neg- ative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recom- mends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 13. Supply Voltage Protection AI02169 VCC 0.1 µF DEVICE VCC VSS |
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