Electrical Characteristics (at Ta=25°C unless otherwise noted)

SMD ESD Protection Diode

MMBZ5V6AL-HF

MMBZ6V2AL-HF

MMBZ6V8AL-HF

MMBZ9V1AL-HF

MMBZ5V1AL-HF

VRWM

(V)

IPP (A)

Max. VF

@IF=10mA

Max. clamping

voltage

2

3

3

4.5

6

4.8

5.32

5.89

6.46

8.65

5

20

1

1

1

0.9

0.9

0.9

0.9

0.9

13

8

8.7

9.6

14

2

3

2.76

2.5

1.7

26

24

24

24

24

Part No.

Comchip Technology CO., LTD.

REV:A

Page 2

Unidirectional (circuit tied to Pin 1 and 3 or Pins 2 to 3)

(µA)

(V)

5

5

0.5

0.5

0.3

IT(mA)

Min

Nom

Max

5.1

5.6

6.2

6.8

9.1

5.4

5.88

6.51

7.14

9.56

VC (V)

IR

Typ.

capacitance

@VR=0V,1MHz

CJ (pF)

(W)

PPP

Breakdown voltage

VBR (V)

MMBZ15VAL-HF

MMBZ18VAL-HF

MMBZ20VAL-HF

MMBZ27VAL-HF

MMBZ12VAL-HF

VRWM

(V)

IPP (A)

Max. VF

@IF=10mA

Max. clamping

voltage

(Note 1)

8.5

12

14.5

16

22

11.4

14.25

17.10

19

25.65

1

1

1

1

1

0.9

0.9

0.9

0.9

0.9

17

21

25

38

40

2.35

1.9

1.6

1

1

40

40

40

38

40

Part No.

Unidirectional (circuit tied to Pin 1 and 3 or Pins 2 to 3)

(nA)

(V)

200

50

50

50

50

IT(mA)

Min

Nom

Max

12

15

18

20

27

12.6

15.75

18.90

21

28.35

VC (V)

IR

Typ.

capacitance

@VR=0V,1MHz

CJ (pF)

(W)

PPP

Breakdown voltage

VBR (V)

MMBZ33VAL-HF

26

31.35

1

0.9

46

0.87

40

50

33

34.65

Notes: 1. Surge current waveform per Fig.5 .

99

85

28

36

16

17

76

117

64

24

13

QW-JP188