Electrical Characteristics (at Ta=25°C unless otherwise noted)

Page 2

Comchip Technology CO., LTD.

Units

Symbol

Parameter

Typ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

hFE

30

30

10

5000

10000

V

V

V

µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

DC current gain

Transition frequency

Min

Max

Conditions

VCE(sat)

VBE

10000

20000

1.5

2.0

MHz

Collector-emitter saturation voltage

Base-emitter on voltage

IC = 100µA, IE = 0

IC = 0.1mA, IB = 0

IE = 100µA, IC = 0

IE = 0, VCB = 30V

IE = 0, VCE = 10V

VCE = 5V, IC = 10mA

IC = 100mA, IB = 0.1mA

0.1

0.1

µA

V

V

hFE

hFE

hFE

fT

125

VCE = 5V, IC = 10mA

VCE = 5V, IC = 100mA

VCE = 5V, IC = 100mA

MMBTA13-HF

MMBTA13-HF

MMBTA14-HF

MMBTA14-HF

IC = 100mA, VCE = 5V

IC = 10mA, VCE = 5V, f = 100MHz

Rating and Characteristic Curves (MMBTA13/14-HF)

Fig.1 - Max Power Dissipation vs

Ambient Temperature

Ambient Temperature, TA (°C)

0

25

50

100

125

150

0

100

150

200

250

300

350

Fig.2 - Collector Emitter Saturation

Voltage vs Collector Current

Collector Current, IC (mA)

1

100

1000

0.4

0.5

0.6

0.7

0.8

1.1

10

0.9

1.0

75

50

Ta= -50°C

Ta=150°C

Ta=25°C

IC

IB

―=1000

NPN Darlington Amplifier Transistor

REV:A

QW-JTR140