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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M36W108AT датащи(PDF) 23 Page - STMicroelectronics |
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M36W108AT датащи(HTML) 23 Page - STMicroelectronics |
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23 / 36 page  23/36 M36W108AT, M36W108AB Table 21. Flash Data Polling and Toggle Bits AC Characteristics (1) (TA = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; VCCF = 2.7V to 3.6V) Note: 1. All other timings are defined in Read AC Characteristics table. Symbol Parameter Flash Memory Chip Unit 100 120 CL = 30pF CL = 100pF Min Max Min Max tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec tEHQ7V Chip Enable High to DQ7 Valid (Program, EF Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, EF Controlled) 1.0 60 1.0 60 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 40 50 ns tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec |
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