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ISO6441FDFPRQ1 датащи(PDF) 9 Page - Texas Instruments

номер детали ISO6441FDFPRQ1
подробное описание детали  ISO644x-Q1 General-Purpose, Basic and Reinforced, Quad-Channel Digital Isolators
PDF  44 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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ISO6441FDFPRQ1 датащи(HTML) 9 Page - Texas Instruments

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6.6 Insulation Specifications
PARAMETER
TEST CONDITIONS
PACKAGE
UNIT
16-DW
16-DFP
16-DBQ
IEC 60664-1
CLR
External clearance(1)
Side 1 to side 2 distance through air
>8.15
>8.0
>3.7
mm
CPG
External creepage(1)
Side 1 to side 2 distance across package
surface
>8.15
>8.0
>3.7
mm
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
>17
>17
>9
µm
CTI
Comparative tracking index
IEC 60112
>600
>600
>600
V
Material Group
According to IEC 60664-1
I
I
I
Overvoltage category
Rated mains voltage ≤ 150VRMS
I-IV
I-IV
I-IV
Rated mains voltage ≤ 300VRMS
I-IV
I-IV
I-III
Rated mains voltage ≤ 600VRMS
I-IV
I-IV
n/a
Rated mains voltage ≤ 1000VRMS
I-III
I-III
n/a
DIN EN IEC 60747-17 (VDE 0884-17)
Suitability
DIN EN IEC 60747-17 (VDE 0884-17)
suitability(2)
VIORM
Maximum repetitive peak isolation
voltage
AC voltage (bipolar)
1500
1500
707
VPK
VIOWM
Maximum isolation working
voltage
AC voltage (sine wave); time-dependent
dielectric breakdown (TDDB) test.
1061
1061
500
VRMS
DC voltage
1500
1500
707
VDC
VIOTM
Maximum transient isolation
voltage
VTEST = VIOTM, t = 60s (qualification);
VTEST = 1.2 × VIOTM, t= 1s (100% production)
7071
7071
4243
VPK
VIMP
Maximum impulse voltage(3)
Tested in air, 1.2/50µs waveform per IEC
62368-1
8000
8000
4000
VPK
VIOSM
Maximum surge isolation
voltage(4)
VIOSM ≥ 1.3 × VIMP; Tested in oil (qualification
test), 1.2/50μs waveform per IEC 62368-1
10400
10400
5200
VPK
qpd
Apparent charge(5)
Method a, After Input-output safety test
subgroup 2/3, Vini = VIOTM, tini = 60s; Vpd(m) =
1.2 × VIORM, tm = 10s
≤5
≤5
≤5
pC
Method a, After environmental tests subgroup 1,
Vini = VIOTM, tini = 60s; Vpd(m) = 1.6 × VIORM (for
reinforced devices) or 1.2 × VIORM (for basic
devices) for tm = 10s
≤5
≤5
≤5
Method b: At routine test (100% production);
Vini = 1.2 × VIOTM, tini = 1s; Vpd(m) = 1.875
× VIORM (for reinforced devices) or 1.5 ×
VIORM (for basic devices), tm = 1s (method b1)
or Vpd(m) = Vini, tm = tini (method b2)
≤5
≤5
≤5
CIO
Barrier capacitance, input to
output(6)
VIO = 0.4 × sin (2 πft), f = 1MHz
≅1.6
≅1.3
≅1.9
pF
RIO
Insulation resistance, input to
output(6)
VIO = 500V, TA = 25°C
>1012
>1012
>1012
Ω
VIO = 500V, 100°C ≤ TA ≤ 125°C
>1011
>1011
>1011
VIO = 500V at TS = 150°C
>109
>109
>109
Pollution degree
2
2
2
Climatic category
40/125/21 40/125/21 40/125/21
UL 1577
VISO
Withstand isolation voltage
VTEST = VISO , t = 60s (qualification); VTEST = 1.2
× VISO , t = 1s (100% production)
5000
5000
3000
VRMS
(1)
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application.
Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the
isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal
www.ti.com
ISO6440-Q1, ISO6441-Q1, ISO6442-Q1
SLLSG11 – APRIL 2026
Copyright © 2026 Texas Instruments Incorporated
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Product Folder Links: ISO6440-Q1 ISO6441-Q1 ISO6442-Q1



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