AP3400MI

30V N-Channel Enhancement Mode MOSFET

AP3400MI RVE3.9

臺灣永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

---

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.029

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=5A

---

21

25

mΩ

VGS=4.5V , ID=3A

---

23

31

VGS=2.5V , ID=1A

---

30

49

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

0.5

---

1.2

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-2.82

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=5A

---

25

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.5

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=5.8A

---

11.5

---

nC

Qgs

Gate-Source Charge

---

1.6

---

Qgd

Gate-Drain Charge

---

2.9

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=3Ω

ID=5A

---

5

---

ns

Tr

Rise Time

---

47.

---

Td(off)

Turn-Off Delay Time

---

26

---

Tf

Fall Time

---

8

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

530

---

pF

Coss

Output Capacitance

---

130

---

Crss

Reverse Transfer Capacitance

---

36

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

5.8

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4 、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.