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ST7FOXK2 датащи(PDF) 203 Page - STMicroelectronics

номер детали ST7FOXK2
подробное описание детали  8-bit MCU with single voltage Flash memory, SPI, I²C, ADC, timers
PDF  226 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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ST7FOXK2 датащи(HTML) 203 Page - STMicroelectronics

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ST7FOXF1, ST7FOXK1, ST7FOXK2
Electrical characteristics
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12.8.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body model and Machine model. This test conforms to the
JESD22-A114A/A115A standard. For more details, refer to the application note AN1181.
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up
performance.
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
Table 85.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage (Human Body
model)
TA=+25 °C
4000
V
VESD(CDM)
Electrostatic discharge voltage (Charge Device
model)
TA=+25 °C
500
Table 86.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +85 °C
A



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