AP320N10TLG2

100V N-Channel Enhancement Mode MOSFET

AP320N10TLG2 REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

100

111

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = 100V, VGS = 0V

-

-

1

μA

IDSS

Zero Gate Voltage Drain CurrentTJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source on-Resistance4

VGS = 10V, ID = 20A

-

1.3

1.6

mΩ

gfs

Forward Transconductance4

VDS = 10V, ID =20A

-

84

-

S

Ciss

Input Capacitance

VDS = 50V, VGS =0V,

f =1MHz

-

14300

-

pF

Coss

Output Capacitance

-

2120

-

Crss

Reverse Transfer Capacitance

-

50

-

Rg

Gate Resistance

f=1MHz

-

2.8

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 50V,

ID= 20A

-

250

-

nC

Qgs

Gate-Source Charge

-

53

-

Qgd

Gate-Drain Charge

-

77

-

td(on)

Turn-on Delay Time

VGS =10V, VDD = 50V,

RG = 3Ω, ID= 20A

-

41

-

ns

tr

Rise Time

-

88

-

td(off)

Turn-off Delay Time

-

163

-

tf

Fall Time

-

98

-

trr

Body Diode Reverse Recovery Time

IF=20A, di/dt = 100A/μs

-

106

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

245

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current TC=25°C

-

-

312

A

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=90V, VGS=10V, L=1.0mH, IAS=50A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.