AP280P04TLT1

-40V P-Channel Enhancement Mode MOSFET

AP280P04TLT1 REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-40

-44

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.023

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-20A

---

1.6

2.0

mΩ

VGS=-4.5V , ID=-10A

---

2.1

3.5

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID=-250uA

-1.2

-1.6

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-40V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=-40V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-15V , ID=-12A

---

225

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.2

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-10V ,

ID=-40

---

436

---

nC

Qgs

Gate-Source Charge

---

46

---

Qgd

Gate-Drain Charge

---

64

---

Td(on)

Turn-On Delay Time

VDD=-20V , VGS=-10V ,

RG=3.0Ω,

ID=-40

---

62

---

ns

Tr

Rise Time

---

64

---

Td(off)

Turn-Off Delay Time

---

236

---

Tf

Fall Time

---

40

---

Ciss

Input Capacitance

VDS=-20V , VGS=0V , f=1MHz

---

18276

---

pF

Coss

Output Capacitance

---

3800

---

Crss

Reverse Transfer Capacitance

---

1870

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-280

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-32V,VGS=-10V,L=0.1mH,IAS=-100A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

=