AP280N08MP datasheet(1/6 Pages) APME

номер детали	AP280N08MP

подробное описание детали	85V N-Channel Enhancement Mode MOSFET

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AP280N08MP

85V N-Channel Enhancement Mode MOSFET

AP280N08MP RVE1.0

永源微電子科技有限公司

Description

The AP280N08MP uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 85V ID =280A

RDS(ON) < 2.8mΩ VGS=10V （Type：2.1mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP280N08MP

TO-247-3L

AP280N08MP XXX YYYY

450

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

85

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V

280

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V

196

A

IDM

Pulsed Drain Current

1240

A

EAS

Single Pulse Avalanche Energy

1858

mJ

PD@TC=25

℃

Total Power Dissipation4

347.5

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJA

Thermal Resistance Junction-Ambient

0.53

℃/W

RθJC

Thermal Resistance Junction-Case

40

℃

/W

Аналогичный номер детали - AP280N08MP

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A POWER MICROELECTRONIC...	AP280N04HP	835Kb / 8P	40V N-Channel Enhancement Mode MOSFET REV1.0
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Аналогичное описание - AP280N08MP

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General Semiconductor	GFP60N03	115Kb / 5P	N-Channel Enhancement-Mode MOSFET
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Аналогичный номер детали - AP280N08MP

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