AP280N04PIT

40V N-Channel Enhancement Mode MOSFET

AP280N04P/T REV1.0

永源微電子科技有限公司

N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

40

48

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.8

2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS=10V, ID=30A

-

1.2

1.5

mΩ

VGS=4.5V, ID=20A

-

1.7

2.5

mΩ

Ciss

Input Capacitance

VDS=20V, VGS=0V,

f=1.0MHz

-

8300

-

pF

Coss

Output Capacitance

-

1510

-

pF

Crss

Reverse Transfer Capacitance

-

130

-

pF

Qg

Total Gate Charge

VDS=20V, ID=85A,

VGS=10V

-

127

-

nC

Qgs

Gate-Source Charge

-

35

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

26

-

nC

td(on)

Turn-on Delay Time

VDD=20V, ID=85A,

RG=1.6Ω, VGS=10V

-

22.5

-

ns

tr

Turn-on Rise Time

-

6.7

-

ns

td(off)

Turn-off Delay Time

-

80.3

-

ns

tf

Turn-off Fall Time

-

26.9

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

300

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

750

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

TJ=25℃,

IF=IS,dI/dt=100A/μs

-

100

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

163

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =32V,VGS =10V,L=0.1mH,IAS =70A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.