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F2HNK60Z датащи(PDF) 5 Page - STMicroelectronics

номер детали F2HNK60Z
подробное описание детали  N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

F2HNK60Z датащи(HTML) 5 Page - STMicroelectronics

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STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=300V, ID=1.0A,
RG=4.7Ω, VGS=10V
(see Figure 17)
10
30
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD=300V, ID=1.0A,
RG=4.7Ω, VGS=10V
(see Figure 17)
23
50
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain Current
Source-drain Current
(pulsed)
2.0
8.0
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on Voltage
ISD=2.0A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=2.0A, di/dt = 100A/µs,
VDD=20 V, Tj=25°C
178
445
5
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=2.0A, di/dt = 100A/µs,
VDD=20 V, Tj=150°C
200
500
5
ns
nC
A



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