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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AP130N10F датащи(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP130N10F датащи(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 9 page  AP130N10FIPIT 100V N-Channel Enhancement Mode MOSFET AP130N10F/P/T REV1.0 永源微電子科技有限公司 Description The AP130N10FPT uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =130A RDS(ON) < 5.8mΩ @ VGS=10V (Type：4.8mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP130N10F TO-220F-3L AP130N10F XXX YYYY 1000 AP130N10P TO-220-3L AP130N10P XXX YYYY 1000 AP130N10T TO-263-3L AP130N10T XXX YYYY 800 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ 10V 130 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 70 A IDM Pulsed Drain Current 435 A EAS Single Pulse Avalanche Energy 294 mJ IAS Avalanche Current 32 A PD@TC=25 ℃ Total Power Dissipation4 125 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 62.5 ℃/W RθJC Thermal Resistance Junction-Case 1.2 ℃ /W |
Аналогичный номер детали - AP130N10F |
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Аналогичное описание - AP130N10F |
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