AP100N08CMP

80V N-Channel Enhancement Mode MOSFET

AP100N08CMP REV1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID= 10mA

80

-

-

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS, ID= 1mA

1.2

1.7

2.0

V

RDS(ON)

Drain-Source On-stage Resistance

VGS= 4V; ID=30A

-

13

15

mΩ

VGS= 10V; ID=30A

-

-

11

mΩ

IGSS

Gate Source Leakage Current

VGS= ±20V; VDS= 0

-

-

±10

uA

IDSS

Zero Gate Voltage Drain Current

VDS= 80V, VGS= 0V, TJ= 25ºC

-

-

100

μA

Ciss

Input Capacitance

VGS = 0V, VDS = 25V, f =

1.0MHz

-

3795

-

pF

Coss

Output Capacitance

-

1456

-

Crss

Reverse Transfer Capacitance

-

1101

-

RG

Gate resistance

f = 1.0MHz open drain

-

0.75

-

Ω

Qg

Total Gate Charge

VDD = 64V,

ID = 100A,

VGS =10V

-

338

-

nC

Qgs

Gate-Source Charge

-

12

-

Qgd

Gate-Drain Charge

-

175

-

td(on)

Turn-on Delay Time

VDD = 40V,

ID = 100A,

RG = 25Ω

-

45

-

ns

tr

Turn-on Rise Time

-

178

-

td(off)

Turn-off Delay Time

-

1062

-

tf

Turn-off Fall Time

-

830

-

ISD

Continuous Source Current

TC = 25 ºC

-

-

100

A

ISM

Pulsed Source Current

-

-

400

VSD

Diode Forward Voltage

IS=60A; VGS=0V

-

-

1.7

V

trr

Reverse Recovery Time

VDD = 40V,IF = 30A, diF/dt

=100A /μs

-

210

-

ns

Qrr

Reverse Recovery Charge

-

1.5

-

uC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is VDD

=25VGS=10V,L=0.4mH,IAS=60A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.