VN10/0605/0610/2222 Series

Siliconix

P-37993—

Rev. C (08/08/94)

4

Typical Characteristics (25_C Unless Otherwise Noted)

0

4

8

12

16

20

0

400

800

1200

1600

2000

2400

0

0.5

1.0

1.5

2.0

-55 -30 -5

20

45

70

95

120 145

0

1

2

3

4

5

6

7

0

0.2

0.4

0.6

0.8

1.0

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

Gate Charge

OnResistance vs. Drain Current

Qg - Total Gate Charge (pC)

VDS - DraintoSource Voltage (V)

Crss

Coss

Ciss

VDS = 30 V

ID = 0.5 A

ID - Drain Current (A)

Capacitance

OnResistance vs. Junction Temperature

VGS = 10 V, rDS @ 0.5 A

TJ - Junction Temperature (_C)

rDS @ 10 V = VGS

rDS @ 5 V = VGS

TJ = 25_C

VGS = 5 V, rDS @ 0.05 A

VGS = 0 V

f = 1 MHz

0.001

0.010

0.100

1.000

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

SourceDrain Diode Forward Voltage

OnResistance vs. GatetoSource Voltage

VSD - SourcetoDrain Voltage (V)

VGS - GatetoSource Voltage (V)

0

1

2

3

4

5

6

0

2

4

6

8

101214 1618 20

rDS = 500 mA

rDS = 50 mA